PART |
Description |
Maker |
KU3600N10W |
N CHANNEL TRENCH MOS FIELD
|
Korea Electronics (KEC)
|
FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor N-CHANNEL MOS FET 5-PIN 2 CIRCUITS Silicon transistor
|
NEC Corp. NEC[NEC]
|
KU047N08P |
N-ch Trench MOS FET
|
Korea Electronics (KEC)
|
KUS220N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KU086N10F KU086N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING From old datasheet system
|
NEC[NEC]
|
VT60L45PW |
Trench MOS Schottky technology
|
Vishay Siliconix
|
|